Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films

Osama S. Elsherif; Karen D. Vernon-Parry; Jan H. Evans-Freeman; Paul W. May

doi:10.4028/www.scientific.net/MSF.717-720.1315

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Electrical Characterisation of Defects in...

Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films

Abstract:

Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) have been applied to B-doped thin polycrystalline diamond films deposited on p+-silicon by hot filament chemical vapour deposition. Films with two boron concentrations (1.5×10^19 cm-3 and 4×10^19 cm-3) were selected to study the effect of B concentration on the electronic states in CVD-diamond. We have investigated whether these deep states arise from point or extended defects. DLTS and AS find two hole traps, E1 (0.29±0.03 eV) and E2 (0.53±0.07 eV), in both films. A third level, E3 (0.36±0.02 eV) was also detected in the more highly doped film. The defect levels E1 and E2 exhibited behaviour typical of extended defects, which we suggest may be due to B segregated to the grain boundaries. In contrast, the defect level E3 exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in bulk diamond.

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Materials Science Forum (Volumes 717-720)

Pages:

1315-1318

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1315

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Online since:

May 2012

Authors:

Osama S. Elsherif, Karen D. Vernon-Parry, Jan H. Evans-Freeman, Paul W. May

Keywords:

Admittance Spectroscopy, DLTS, Extended Defects, Point Defect, Polycrystalline Diamond

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