Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films

Abstract:

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Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) have been applied to B-doped thin polycrystalline diamond films deposited on p+-silicon by hot filament chemical vapour deposition. Films with two boron concentrations (1.5×10^19 cm-3 and 4×10^19 cm-3) were selected to study the effect of B concentration on the electronic states in CVD-diamond. We have investigated whether these deep states arise from point or extended defects. DLTS and AS find two hole traps, E1 (0.29±0.03 eV) and E2 (0.53±0.07 eV), in both films. A third level, E3 (0.36±0.02 eV) was also detected in the more highly doped film. The defect levels E1 and E2 exhibited behaviour typical of extended defects, which we suggest may be due to B segregated to the grain boundaries. In contrast, the defect level E3 exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in bulk diamond.

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck

Pages:

1315-1318

DOI:

10.4028/www.scientific.net/MSF.717-720.1315

Citation:

O. S. Elsherif et al., "Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films", Materials Science Forum, Vols. 717-720, pp. 1315-1318, 2012

Online since:

May 2012

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$35.00

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