CdGeN2 and ZnGe0.5Sn0.5N2: Two New Nitride Semiconductors with Band Gaps in the Blue-Green

Atchara Punya; Walter R.L. Lambrecht

doi:10.4028/www.scientific.net/MSF.717-720.1331

Paper Titles

Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage
p.1299

Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues
p.1303

Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs
p.1307

Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces
p.1311

Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films
p.1315

Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate
p.1319

Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode
p.1323

Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC
p.1327

CdGeN₂ and ZnGe_0.5Sn_0.5N₂: Two New Nitride Semiconductors with Band Gaps in the Blue-Green
p.1331

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720CdGeN2 and ZnGe0.5Sn0.5N2: Two New Nitride...

CdGeN₂ and ZnGe_0.5Sn_0.5N₂: Two New Nitride Semiconductors with Band Gaps in the Blue-Green

Abstract:

First-principles calculations are presented for CdGeN2 and ZnGe0.5Sn0.5N2 compounds with the orthorhombic structure derived from wurtzite. Lattice constants and internal parameters are obtained from local density approximation full-potential linearized muffin-tin orbital calculations and the quasiparticle self-consistent GW method is used to calculate the band structures. Corrections for zero-point motion and exciton binding energy are included. Both approaches lead to gaps in the blue-green region.