Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs

Krishna Shenai; Krushal Shah

doi:10.4028/www.scientific.net/MSF.717-720.1307

Paper Titles

Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals
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Evolution of Structural and Electrical Properties of Au/Ni Contacts onto P-GaN after Annealing
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Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues
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Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs
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Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces
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Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films
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Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate
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Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Design of High-Performance Synchronous Buck DC-DC...

Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs

Abstract:

Simple, physics-based, and accurate circuit models are reported for GaN power HEMTs and inductors; these models are then used to design high-performance chip-scale synchronous buck (SB) power converters to provide agile point-of-load (POL) low-voltage ( down to 1V) high-current (up to 10A) power to portable mobile devices from a battery. Excellent agreement between the measured and simulated results is demonstrated for load regulation for a 19V/1.2V, 800 kHz SB converter; for comparison, the same converter performance using the best commercially available state-of-the-art silicon power MOSFETs is also evaluated. It is shown that the conventional approach used for estimating power loss of a SB power converter is in error; a new application-specific Figure of Merit (FOM) for power switches is proposed that accounts for both input and output switching losses.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1307-1310

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1307

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Online since:

May 2012

Authors:

Krishna Shenai, Krushal Shah

Keywords:

Circuit Model, Dc-Dc Converter, Figure of Merit (FOM), Gallium Nitride Power HEMT, Silicon Power MOSFET, Thermal Constraint

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