Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage

Kazuki Nomoto; Tohru Nakamura; Naoki Kaneda; Toshihiro Kawano; Tadayoshi Tsuchiya; Tomoyoshi Mishima

doi:10.4028/www.scientific.net/MSF.717-720.1299

Paper Titles

Fabrication of Silicon Carbide Thin Film as a Stabilizing Layer for Improving the Stability of Porous Silicon Photodiodes
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Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics
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Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals
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Evolution of Structural and Electrical Properties of Au/Ni Contacts onto P-GaN after Annealing
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Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage
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Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues
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Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs
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Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces
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Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Large GaN p-n Junction Diodes of 3 mm in Diameter...

Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage

Abstract:

This report describes the first to fabricate GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage were 124 mΩ•cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of our material and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.

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Materials Science Forum (Volumes 717-720)

Pages:

1299-1302

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1299

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Online since:

May 2012

Authors:

Kazuki Nomoto, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya, Tomoyoshi Mishima

Keywords:

Gallium Compounds, High Temperature Electronics, p-n Junction, Power Semiconductor Device

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