Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals

Mamoru  Imade; Yusuke Konishi; Hideo Takazawa; Kosuke Murakami; Hiroki Imabayashi; Yuma Todoroki; Akira Kitamoto; Daisuke Matsuo; Mihoko Maruyama; Masashi  Yoshimura; Yasuo  Kitaoka; Takatomo Sasaki; Yusuke  Mori

doi:10.4028/www.scientific.net/MSF.717-720.1291

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Control of the Growth Habit in the Na Flux Growth...

Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals

Abstract:

Seeded growth of gallium nitride (GaN) crystals on a spontaneously nucleated small GaN by the Na flux method was performed. In this study, we attempted to control the growth habit by changing the flux composition (Ga/Na) and by introducing a small amount of additives (Ca and Li). Our experiment clarified that a low Ga composition was preferred to grow high-crystallinity prismatic GaN crystals with a high growth rate. Furthermore, the transparent GaN single crystals with prism shape could be grown by the addition of Ca and Li.

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Materials Science Forum (Volumes 717-720)

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1291-1294

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1291

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Online since:

May 2012

Authors:

Mamoru Imade, Yusuke Konishi, Hideo Takazawa, Kosuke Murakami, Hiroki Imabayashi, Yuma Todoroki, Akira Kitamoto, Daisuke Matsuo, Mihoko Maruyama, Masashi Yoshimura, Yasuo Kitaoka, Takatomo Sasaki, Yusuke Mori

Keywords:

Ca-Li, Flux Composition, Gallium Nitride (GaN), Growth Habit, Na Flux Method, Seeded-Growth

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