Conversion of Si Nanowires into SiC Nanotubes

Abstract:

Carburization of silicon nanowires (NWs), with diameters of about 800 nm and lengths of about 10 µm, under methane at high temperature in order to obtain silicon carbide (SiC) nanostructures is reported here. The produced SiC nanostructures display a tubular shape and are polycrystalline. The as-prepared silicon carbide nanotubes (NTs) were characterized and studied by scanning electron microscopy (SEM), dual focused ion beam – scanning electron microscope (FIB-SEM), transmission electron microscopy (TEM) and Raman spectroscopy. The formation of nanotubes can be explained by the out-diffusion of Si through the SiC during the carburization process.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1275-1278
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1275
• Online since: May 2012
• Authors: Maelig Ollivier, Laurence Latu-Romain, Edwige Bano, Arnaud Mantoux, Thierry Baron
• Keywords: Carburization, Nanotube, Nanowire, Out-Diffusion, Silicon, Silicon Carbide (SiC)

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