Reliability of Silicon Carbide Integrated Circuits at 300°C

Alexey V. Vert; Emad Andarawis; Cheng Po Chen

doi:10.4028/www.scientific.net/MSF.717-720.1265

Paper Titles

SiC Solid-State Disconnect for High Power System Applications
p.1249

A 450°C High Voltage Gain AC Coupled Differential Amplifier
p.1253

Bipolar Integrated OR-NOR Gate in 4H-SiC
p.1257

300C Capable Digital Integrated Circuits in SiC Technology
p.1261

Reliability of Silicon Carbide Integrated Circuits at 300°C
p.1265

Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator
p.1269

Conversion of Si Nanowires into SiC Nanotubes
p.1275

Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates
p.1279

Fabrication of Silicon Carbide Thin Film as a Stabilizing Layer for Improving the Stability of Porous Silicon Photodiodes
p.1283

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Reliability of Silicon Carbide Integrated Circuits...

Reliability of Silicon Carbide Integrated Circuits at 300°C

Abstract:

Silicon carbide based integrated circuits (ICs) have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon and silicon on insulator. Analog and digital silicon carbide (SiC) based circuits were fabricated and characterized at room temperature and 300°C. An operational amplifier and a ring oscillator were tested for prolonged period of time to evaluate their stability and reliability at 300°C. More than 1,000 hours was achieved with the operational amplifier without failures and the ring oscillator operated for almost 300 hours.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1265-1268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1265

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Online since:

May 2012

Authors:

Alexey V. Vert, Emad Andarawis, Cheng Po Chen

Keywords:

High-Temperature, MOSFET, N-MOS, Operational Amplifier, Reliability, Ring Oscillator, Silicon Carbide (SiC)

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