A 450°C High Voltage Gain AC Coupled Differential Amplifier

Jie Yang; John Fraley; Bryon Western; Marcelo Schupbach; Alexander B. Lostetter

doi:10.4028/www.scientific.net/MSF.717-720.1253

Paper Titles

Performance of a 25kW 700V Galvanically Isolated Bidirectional DC-DC Converter Using 1.2kV Silicon Carbide MOSFETs and Schottky Diodes
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Switching Losses in a SiC-Based DC-DC Multilevel Boost Converter
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High Voltage SiC Schottky Diodes in Rectifiers for X-Ray Generators
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SiC Solid-State Disconnect for High Power System Applications
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A 450°C High Voltage Gain AC Coupled Differential Amplifier
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Bipolar Integrated OR-NOR Gate in 4H-SiC
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300C Capable Digital Integrated Circuits in SiC Technology
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Reliability of Silicon Carbide Integrated Circuits at 300°C
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Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720A 450°C High Voltage Gain AC Coupled Differential...

A 450°C High Voltage Gain AC Coupled Differential Amplifier

Abstract:

APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of high temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with harsh environment sensors that deliver weak AC output signals to improve signal quality and noise immunity.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1253-1256

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1253

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Online since:

May 2012

Authors:

Jie Yang, John Fraley, Bryon Western, Marcelo Schupbach, Alexander B. Lostetter

Keywords:

Differential Amplifier, Extreme Temperature, Silicon Carbide (SiC)

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