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A 450°C High Voltage Gain AC Coupled Differential Amplifier

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Abstract:

APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of high temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with harsh environment sensors that deliver weak AC output signals to improve signal quality and noise immunity.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1253-1256

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1253

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Online since:

May 2012

Authors:

Jie Yang, John Fraley, Bryon Western, Marcelo Schupbach, Alexander B. Lostetter

Keywords:

Differential Amplifier, Extreme Temperature, Silicon Carbide (SiC)

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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