Performance of a 25kW 700V Galvanically Isolated Bidirectional DC-DC Converter Using 1.2kV Silicon Carbide MOSFETs and Schottky Diodes

Abstract:

This paper presents the development and experimental evaluation of a 25kW, 700V galvanically isolated bidirectional converter based on silicon carbide (SiC) MOSFETs and Schottky diodes. Compared with a similarly rated silicon (Si) IGBT version, the SiC converter exhibits a 3% improvement in peak efficiency, 2.6 times reduction in total losses, and three times improvement in power density.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1237-1240
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1237
• Online since: May 2012
• Authors: Amit K. Jain, David McIntosh, Matt Jones, Brian Ratliff
• Keywords: Bidirectional Converter, DC-DC Conversion, SiC Application

References

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