Diamond Vertical Schottky Barrier Diode with Al2O3 Field Plate

Hitoshi Umezawa; Masanori Nagase; Yukako Kato; Shinichi Shikata

doi:10.4028/www.scientific.net/MSF.717-720.1319

Paper Titles

Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage
p.1299

Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues
p.1303

Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs
p.1307

Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces
p.1311

Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films
p.1315

Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate
p.1319

Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode
p.1323

Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC
p.1327

CdGeN₂ and ZnGe_0.5Sn_0.5N₂: Two New Nitride Semiconductors with Band Gaps in the Blue-Green
p.1331

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Diamond Vertical Schottky Barrier Diode with Al₂O₃ Field Plate

Abstract:

A field-plate structure is applied to vertical diamond Schottky barrier diode. A sputtered Al₂O₃ with 0.2 µm thickness is utilized for field-plate insulator. Fabricated diamond VSBD shows low leakage characteristics. Accordingly, the breakdown voltage is improved from 900V to 1,800V.