Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

Lei Lin; Jian Hui Zhao

doi:10.4028/www.scientific.net/MSF.717-720.1163

Paper Titles

Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair
p.1147

12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination
p.1151

High dI/dt Pulse Switching of 1.0 cm² SiC GTOs
p.1155

Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications
p.1159

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor
p.1163

Comparison of SiC Thyristors with Differently Etched JTEs
p.1167

High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection
p.1171

Bipolar Degradation in 4H-SiC Thyristors
p.1175

Pulse Characterization of Optically Triggered SiC Thyristors
p.1179

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Fabrication and Characterization of 4H-SiC 6kV...

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

Abstract:

In this paper, we report a 0.1cm² 4H-SiC gate-turn-off (GTO) thyristor with 6 kV blocking voltage fabricated on a structure with a 60µm blocking layer. A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on- and off-states, and a low leakage current with 63% devices blocking 3kV or higher. Initial pulse testing result shows that the fabricated GTOs are capable of both high current density and high turn-off speed.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1163-1166

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1163

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Online since:

May 2012

Authors:

Lei Lin, Jian Hui Zhao

Keywords:

4H-SiC, GTO, High Voltage (HV), MJTE, Thyristor

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