Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair

Abstract:

This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 1147-1150
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1147
• Online since: May 2012
• Authors: Nii Adotei Parker-Allotey, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip Andrew Mawby, Rob Nash, Rob Magill
• Keywords: Inductive Switching, Silicon Carbide Schottky Barrier Diodes, Silicon PiN Diodes

References

[1] A.Mittal, "Energy efficiency enabled by power electronics", in Electron Devices Meeting (IEDM), 2010 IEEE International, Dec. 2010, p.1.2.1-1.2.7.

DOI: 10.1109/iedm.2010.5703275

[2] M. Bhatnagar and B. Baliga, "Analysis of silicon carbide power device performance," in Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on, Apr 1991, p.176–180.

DOI: 10.1109/ispsd.1991.146093

[3] N. Wright, C. Johnson, and A. O'Neill, "Switching performance of 4H-SiC power devices", in Power Electronics and Variable Speed Drives, 1996. Sixth International Conference on (Conf. Publ. No. 429), Sept. 1996, p.253–257.

DOI: 10.1049/cp:19960922

[4] B. J. Baliga, Fundamentals of Power Semiconductor Devices, 1st ed. Springer Publishing Company, Incorporated, 2008.

[5] C. Johnson, M. Rahimo, N. Wright, D. Hinchley, A. Horsfall, D. Morrison, and A. Knights, "Characterisation of 4H-SiC schottky diodes for IGBT applications," in Industry Applications Conference, vol. 5, 2000, p.2941–2947.

DOI: 10.1109/ias.2000.882584

[6] P. Palmer, A. Bryant, J. Hudgins, and E. Santi, "Simulation and optimisation of diode and IGBT interaction in a chopper cell using MATLAB and Simulink," in Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the, vol. 4, 2002, p.2437–2444 vol.4.

DOI: 10.1109/ias.2002.1042787

[7] A. Bryant, L. Lu, E. Santi, J. Hudgins, and P. Palmer, "Modeling of IGBT resistive and inductive turn-on behavior," Industry Applications, IEEE Transactions on, vol. 44, no. 3, p.904–914, May-June 2008.

DOI: 10.1109/tia.2008.921384

[8] S. Sze and K. Ng, Physics of semiconductor devices, ser. Wiley-Interscience publication. Wiley-Interscience, 2007.