Investigation of Current Gain Degradation in 4H-SiC Power BJTs

Benedetto Buono; Reza Ghandi; Martin Domeij; B. Gunnar Malm; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.717-720.1131

Paper Titles

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length
p.1113

Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process
p.1117

Large Area 1200 V SiC BJTs with β>100 and ρ_ON<3 mΩcm²
p.1123

1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability
p.1127

Investigation of Current Gain Degradation in 4H-SiC Power BJTs
p.1131

Development of 15 kV 4H-SiC IGBTs
p.1135

Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
p.1139

An Investigation of Material Limit Characteristics of SiC IGBTs
p.1143

Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair
p.1147

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Investigation of Current Gain Degradation in 4H-SiC Power BJTs

Abstract:

The current gain degradation of 4H-SiC BJTs with no significant drift of the on-resistance is investigated. Electrical stress on devices with different emitter widths suggests that the device design can influence the degradation behavior. Analysis of the base current extrapolated from the Gummel plot indicates that the reduction of the carrier lifetime in the base region could be the cause for the degradation of the gain. However, analysis of the base current of the base-emitter diode shows that the degradation of the passivation layer could also influence the reduction of the current gain.