Large Area 1200 V SiC BJTs with β&gt;100 and ρON&lt;3 mΩcm2

Martin Domeij; Andrei Konstantinov; Anders Lindgren; Carina Zaring; Krister Gumaelius; Mats Reimark

doi:10.4028/www.scientific.net/MSF.717-720.1123

Paper Titles

4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics
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High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
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Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length
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Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process
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Large Area 1200 V SiC BJTs with β>100 and ρ_ON<3 mΩcm²
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1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability
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Investigation of Current Gain Degradation in 4H-SiC Power BJTs
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Development of 15 kV 4H-SiC IGBTs
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Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Large Area 1200 V SiC BJTs with β>100 and...

Large Area 1200 V SiC BJTs with β>100 and ρ_ON<3 mΩcm²

Abstract:

Large (4.3 mm2) area SiC BJTs were demonstrated with a current gain of 117 and a specific on-resistance of 2.8 mΩcm2. The open-base and open-emitter breakdown voltages are stable and with margin sufficient for 1200 V blocking. Fast and tail-current free switching behaviour was shown with rise- and fall-times in the range of 10-30 ns and the SiC BJTs were shown to be rugged in short-circuit and unclamped inductive switching.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1123-1126

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1123

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Online since:

May 2012

Authors:

Martin Domeij, Andrei Konstantinov, Anders Lindgren, Carina Zaring, Krister Gumaelius, Mats Reimark

Keywords:

Avalanche, Bipolar Junction Transistor (BJT), Current Gain, On-Resistance, Short-Circuit, Switching

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References

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