Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC

Kalyani G. Menon; Luther King Ngwendson; Akira Nakajima; Ekkanath Madathil Sankara Narayanan; Graham P. Bruce

doi:10.4028/www.scientific.net/MSF.717-720.1139

Paper Titles

Large Area 1200 V SiC BJTs with β>100 and ρ_ON<3 mΩcm²
p.1123

1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability
p.1127

Investigation of Current Gain Degradation in 4H-SiC Power BJTs
p.1131

Development of 15 kV 4H-SiC IGBTs
p.1135

Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
p.1139

An Investigation of Material Limit Characteristics of SiC IGBTs
p.1143

Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair
p.1147

12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination
p.1151

High dI/dt Pulse Switching of 1.0 cm² SiC GTOs
p.1155

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Ultra high performance of 12kV Clustered Insulated...

Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC

Abstract:

The performance of a 12kV planar Clustered Insulated Gate Bipolar Transistor (CIGBT) is compared to an equivalent IGBT in 4H-SiC through extensive 2D numerical simulations. The CIGBT shows 40% reduction in Eoff-Vce(sat) trade off losses with a short circuit endurance time of more than 10µs.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1139-1142

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1139

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Online since:

May 2012

Authors:

Kalyani G. Menon, Luther King Ngwendson, Akira Nakajima, Ekkanath Madathil Sankara Narayanan, Graham P. Bruce

Keywords:

Clustered Insulated Gate Bipolar Transistor (CIGBT), Insulated Gate Bipolar Transistor, Power Semiconductor Device, Silicon Carbide (SiC), Wide Band Gap

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