Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Sei Hyung Ryu; Lin Cheng; Sarit Dhar; Craig Capell; Charlotte  Jonas; Robert  Callanan; Michael  J. O'Loughlin; Albert A. Burk; Aivars J. Lelis; Charles J. Scozzie; Anant K. Agarwal; John W. Palmour

doi:10.4028/www.scientific.net/MSF.717-720.1059

Paper Titles

Design of an Integrated SiC JFET Power Switch and Flyback Diode
p.1041

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA
p.1045

Fabrication Issues of 4H-SiC Static Induction Transistors
p.1049

High Performance SiC IEMOSFET/SBD Module
p.1053

Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications
p.1059

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
p.1065

690V, 1.00 mΩcm² 4H-SiC Double-Trench MOSFETs
p.1069

SiC MOSFET Reliability Update
p.1073

Material Defects and Rugged Electrical Power Switching in Semiconductors
p.1077

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs...

Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications

Abstract:

We present our recent developments in 4H-SiC power DMOSFETs. 4H-SiC DMOSFETs with a room temperature specific on-resistance of 3.7 mΩ-cm2 with a gate bias of 20 V, and an avalanche voltage of 1550 V with gate shorted to source, was demonstrated. A threshold voltage of 3.5 V was extracted from the power DMOSFET, and a subthreshold swing of 200 mV/dec was measured. The device was successfully scaled to an active area of 0.4 cm2, and the resulting device showed a drain current of 377 A at a forward voltage drop of 3.8 V at 25oC.