Design of an Integrated SiC JFET Power Switch and Flyback Diode

Rahul Radhakrishnan; Jian Hui Zhao

doi:10.4028/www.scientific.net/MSF.717-720.1041

Paper Titles

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors
p.1025

Characterization of SiC JFET in Novel Packaging for 1 MHz Operation
p.1029

Packaging Technologies for 500°C SiC Electronics and Sensors
p.1033

High Voltage SiC Vertical JFET for High Power RF Applications
p.1037

Design of an Integrated SiC JFET Power Switch and Flyback Diode
p.1041

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA
p.1045

Fabrication Issues of 4H-SiC Static Induction Transistors
p.1049

High Performance SiC IEMOSFET/SBD Module
p.1053

Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications
p.1059

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Design of an Integrated SiC JFET Power Switch and...

Design of an Integrated SiC JFET Power Switch and Flyback Diode

Abstract:

In this paper, we describe the design of a high voltage SiC VJFET monolithically integrated with a JBS diode. The integrated device that was demonstrated up to 834 V in forward blocking doesn’t add any steps to the VJFET fabrication process. While the diode and VJFET share the same surface field termination mechanism, they are partially isolated using implanted field rings. We describe TCAD based optimization of the dimensions of these field rings and outline the design of the JBS diode using a fully analytical 2-D model.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1041-1044

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1041

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Online since:

May 2012

Authors:

Rahul Radhakrishnan, Jian Hui Zhao

Keywords:

Diode, Flyback, Freewheeling, Junction Barrier Schottky (JBS) Diode, Power, Rectifier, Silicon Carbide (SiC), Switch, Synchronous, VJFET

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