Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Andreas Gällström; Ivan G. Ivanov; R. Coble; Robert P. Devaty; W.J. Choyke; Erik Janzén

doi:10.4028/www.scientific.net/MSF.717-720.259

Paper Titles

Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model
p.241

On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps
p.247

Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?
p.251

Excitation Properties of Silicon Vacancy in Silicon Carbide
p.255

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy
p.259

Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
p.263

Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
p.267

Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.271

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding
p.275

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Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Abstract:

Emission of carbon-related defects is investigated by means of selectively-excited photoluminescence in high purity 4H-SiC electron-irradiated with very low dose. Two new centers with clearly associated phonon replicas are observed, one of which is tentatively assigned to the carbon split interstitial at hexagonal site. The temperature dependence of the spectrum is also studied and indicates that at least some of the observed luminescence lines arise from recombination of excitons bound to isoelectronic centers.