Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding

János Mizsei; Oleg Korolkov; Natalja Sleptsuk; Jana Toompuu; Toomas Rang

doi:10.4028/www.scientific.net/MSF.717-720.275

Paper Titles

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy
p.259

Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
p.263

Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
p.267

Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.271

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding
p.275

Long Carrier Lifetimes in n-Type 4H-SiC Epilayers
p.279

Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
p.285

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
p.289

High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
p.293

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Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding

Abstract:

This paper is a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the Kelvin Probe method has shown an increase in the density of surface states after the diffusion welding from 2x10¹⁵cm^-2to 3.5x10¹⁶ cm^-2.