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Paper Titles
Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
p.263
Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
p.267
Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.271
Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding
p.275
Long Carrier Lifetimes in n-Type 4H-SiC Epilayers
p.279
Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
p.285
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
p.289
High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
p.293
Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
p.297

Long Carrier Lifetimes in n-Type 4H-SiC Epilayers

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Abstract:

Recent advances in preparing n-type 4H-SiC with long carrier lifetimes have greatly enhanced the possibility of realizing commercially available, very high voltage and high power solid state switching diodes. For the range > several kV, vertical bipolar structures are required with drift layers exhibiting carrier lifetimes ≥ several µsec. Recently, low-doped epilayers with carrier lifetimes in excess of this have been demonstrated, thus approaching a goal that has been pursued for over a decade. Historically, the short lifetimes in early epitaxial layers (a few hundred nsec) were eventually identified with the Vc-related Z1/2 lifetime killer. Current strategies to minimize this defect are an essential ingredient in the procedure for obtaining long-lifetime material. In order to optimize the attainable lifetimes, it has been shown that in addition to low Z1/2 levels, very thick layers are required to minimize the effects of recombination in the substrate and surface passivation is also necessary to minimize surface recombination (S < 1000 cm/sec).

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Periodical:

Materials Science Forum (Volumes 717-720)

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279-284

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.279

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Online since:

May 2012

Authors:

Paul B. Klein

Keywords:

4H-SiC, Carrier Lifetime, Defect, Recombination

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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