Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Seiji Nishikawa; Ryota Okada; Hideharu Matsuura

doi:10.4028/www.scientific.net/MSF.717-720.271

Paper Titles

Excitation Properties of Silicon Vacancy in Silicon Carbide
p.255

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy
p.259

Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
p.263

Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
p.267

Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.271

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding
p.275

Long Carrier Lifetimes in n-Type 4H-SiC Epilayers
p.279

Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
p.285

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
p.289

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Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Abstract:

To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode, because transient capacitance methods such as deep level transient spectroscopy and isothermal capacitance transient spectroscopy are feasible only in low-resistivity semiconductors. The reverse current consists the reverse current through the balk and the surface leakage current of the diode. It is elucidated that the sacrifice oxidation could dramatically reduce the surface currents of diodes in the case of high-purity semi-insulating 4H-SiC, suggesting that the densities and emission rates of traps in the bulk of the SiC can be determined from the transient reverse current.