Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model

Abstract:

It has been clarified that Z_1/2 center, a well known deep level as a lifetime killer, can be reduced to the concentration below 10¹¹ cm^-3 by thermal oxidation or C⁺ implantation plus Ar annealing. In this study, the authors investigate the trap-reduction phenomena systematically (experimentally), and propose a model to analyze the phenomena. Furthermore, prediction of the defect distributions is realized by solving a diffusion equation in accordance with the trap reduction model. This analytical model can explain almost all experimental data: oxidation-temperature dependence, oxidation-time dependence, and initial-Z_1/2-concentration dependence of the defect reduction. Based on these results, the authors accomplish to eliminate the Z_1/2 center to a depth of 100 μm in the sample with a relatively high initial-Z_1/2-concentration of 10¹³ cm^-3 by thermal oxidation at 1400°C for 16.5 h.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 241-246
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.241
• Online since: May 2012
• Authors: Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto
• Keywords: Carbon Implantation, Deep Level, Diffusion, Oxidation, Z_1/2

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