Diffusion and Gettering of Transition Metals in 4H-SiC

Katsunori Danno; H. Saitoh; Akinori Seki; T. Shirai; Hiroshi Suzuki; T. Bessho; Yoichiro Kawai; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.717-720.225

Paper Titles

Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations
p.205

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
p.211

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies
p.217

Mn Implantation for New Applications of 4H-SiC
p.221

Diffusion and Gettering of Transition Metals in 4H-SiC
p.225

Chlorine in SiC: Experiment and Theory
p.229

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide
p.233

Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC
p.237

Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model
p.241

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Diffusion and Gettering of Transition Metals in 4H-SiC

Abstract:

Diffusion of transition metals in 4H-SiC has been investigated by secondary ion mass spectroscopy using epilayers and substrates implanted with titanium (Ti), chromium (Cr), iron (Fe), or nickel (Ni). In the epilayers, Cr, Fe, and Ni atoms have diffused by argon (Ar) annealing at 1780°C for 30 min. In n⁺ substrates, the diffusivity of the metals is smaller than that in the epilayers, and only Ni has diffused by the annealing. By the Ar or helium implantation following the implantation of transition metals, diffusion of transition metals can be successfully suppressed.