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Paper Titles
Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
p.211
Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies
p.217
Mn Implantation for New Applications of 4H-SiC
p.221
Diffusion and Gettering of Transition Metals in 4H-SiC
p.225
Chlorine in SiC: Experiment and Theory
p.229
Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide
p.233
Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC
p.237
Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model
p.241
On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps
p.247

Chlorine in SiC: Experiment and Theory

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Abstract:

An annealing study, in the 100-1400 C temperature range ,was carried out on Cl-implanted n- or p-type 4H-SiC epilayers. The electrical characterization of the epilayers shows the rise of several deep levels and the role of Cl, on both carrier concentration and defects' microscopic structure, is discussed in the light of theoretical results obtained by density functional calculations performed on a 64-atom cubic SiC supercell.

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Silicon Carbide and Related Materials 2011 View Preview

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

229-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.229

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Online since:

May 2012

Authors:

Giovanni Alfieri, Tsunenobu Kimoto

Keywords:

Ab Initio, Chlorine, Defect, DFT, DLTS, Impurity

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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