Mn Implantation for New Applications of 4H-SiC

Margareta K. Linnarsson; Jennifer Wong-Leung; Anders Hallén; S.I. Khartsev; A.M. Grishin

doi:10.4028/www.scientific.net/MSF.717-720.221

Paper Titles

Si_xC_y Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties
p.197

Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations
p.205

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
p.211

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies
p.217

Mn Implantation for New Applications of 4H-SiC
p.221

Diffusion and Gettering of Transition Metals in 4H-SiC
p.225

Chlorine in SiC: Experiment and Theory
p.229

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide
p.233

Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC
p.237

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Mn Implantation for New Applications of 4H-SiC

Mn Implantation for New Applications of 4H-SiC

Abstract:

Structural disorder and lattice recovery of high dose, manganese implanted, semi-insulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the [11 3] compared to the [0001] channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.