On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps

Bernd Zippelius; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.717-720.247

Paper Titles

Chlorine in SiC: Experiment and Theory
p.229

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide
p.233

Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC
p.237

Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model
p.241

On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps
p.247

Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?
p.251

Excitation Properties of Silicon Vacancy in Silicon Carbide
p.255

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy
p.259

Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
p.263

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720On the Formation of Intrinsic Defects in 4H-SiC by...

On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps

Abstract:

In this paper the impact of high temperature annealing on the formation of intrinsic defects in 4H-SiC such as Z_1/2 and EH_6/7 was examined. Therefore, three epitaxial layers with various initial concentrations of the Z_1/2- and EH_6/7-centers (10¹¹ – 10¹³ cm^-3) were investigated. It turns out that depending on the initial defect concentration the high temperature annealing leads to a monotone increase of the Z_1/2- and EH_6/7-concentration in a temperature range from 1600 to 1750°C. For a defined temperature above these values, the resulting defect concentration is independent of the sample’s initial values. Beside the growth conditions themselves such as C/Si ratio the thermal post-growth processing has a severe impact on the carrier lifetime which must be taken into account during device fabrication.

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Materials Science Forum (Volumes 717-720)

Pages:

247-250

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.247

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Online since:

May 2012

Authors:

Bernd Zippelius, Jun Suda, Tsunenobu Kimoto

Keywords:

Carrier Lifetime, DLTS, EH_6/7, High Temperature Annealing, Intrinsic Defect, Z_1/2, Μ-Pcd

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