High Temperature Reliability of High-k/SiC MIS Hydrogen Sensors

Benjamin J.D. Furnival; Nicholas G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.717-720.809

Paper Titles

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs
p.793

Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters
p.797

Identification of Slow States at the SiO₂/SiC Interface through Sub-Bandgap Illumination
p.801

Effect of Nuclear Scattering Damage at SiO₂/SiC and Al₂O₃/SiC Interfaces – a Radiation Hardness Study of Dielectrics
p.805

High Temperature Reliability of High-k/SiC MIS Hydrogen Sensors
p.809

Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process
p.813

High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC
p.817

High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices
p.821

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
p.825

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High Temperature Reliability of High-k/SiC MIS Hydrogen Sensors

Abstract:

In this work a Pt/HfO₂/SiO₂/SiC MIS capacitor is exposed in air at 400°C for 1000 hours, with its oxide capacitance, flatband voltage and density of interface traps being measured at various time intervals. After the structure has been shown to operate reliably for extensive periods of time at 400°C, the C-V characteristics of a device from the same fabrication batch are measured at 300°C in different concentrations of H2 and examined for sensitivity. The results demonstrate that gas sensitive MIS capacitors incorporating high-ĸ dielectrics, have the potential to operate at extreme temperatures for long periods of time. This makes them suitable for deployment in hostile conditions, where regular servicing may not be possible.