Effect of Nuclear Scattering Damage at SiO2/SiC and Al2O3/SiC Interfaces – a Radiation Hardness Study of Dielectrics

Muhammad Usman; Anders Hallén; K. Gulbinas; Vytautas Grivickas

doi:10.4028/www.scientific.net/MSF.717-720.805

Paper Titles

Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
p.789

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs
p.793

Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters
p.797

Identification of Slow States at the SiO₂/SiC Interface through Sub-Bandgap Illumination
p.801

Effect of Nuclear Scattering Damage at SiO₂/SiC and Al₂O₃/SiC Interfaces – a Radiation Hardness Study of Dielectrics
p.805

High Temperature Reliability of High-k/SiC MIS Hydrogen Sensors
p.809

Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process
p.813

High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC
p.817

High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices
p.821

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Effect of Nuclear Scattering Damage at SiO2/SiC...

Effect of Nuclear Scattering Damage at SiO₂/SiC and Al₂O₃/SiC Interfaces – a Radiation Hardness Study of Dielectrics

Abstract:

The radiation hardness of Al2O3 as a dielectric for SiC surface passivation is studied and compared to SiO2 for potential application in radiation hard SiC devices. SiO2 is deposited on 4H-SiC by PECVD and post annealed in N2O, whereas Al2O3 is deposited by atomic layer deposition (ALD). The oxides are bombarded with Ar ions in an energy range to produce maximum damage near the oxide/SiC interface. Metal-insulator-semiconductor structures are prepared and their dielectric characteristics are analyzed using capacitance-voltage measurements. Additionally, the effect of the interface damage on surface recombination is studied using the optical free carrier absorption method for the same samples. The results indicate that the SiO2/SiC interface is significantly affected at 1×1011 cm-2 fluence of Ar ions, however, the dielectric properties of Al2O3/SiC interface remain unaffected even for ten times higher fluences. Similar observations are made for the surface recombination measurements.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

805-808

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.805

Citation:

Cite this paper

Online since:

May 2012

Authors:

Muhammad Usman, Anders Hallén, K. Gulbinas, Vytautas Grivickas

Keywords:

4H-SiC, High-k Dielectrics, Interface Damage, MIS, Radiation Hardness

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H.-S. Lee, M. Domeij, C-M. Zetterling, M. Östling, F. Allerstam, E.Ö. Sveinbjörnsson, Appl. Phys. Lett. Vol. 92 (2008), p.082113

Google Scholar

[2] M. Wolborski, M. Bakowski, A. Ortiz, V. Pore, A. Schöner, M. Ritala, M. Leskelä, A. Hallén, Microelectronics and Reliability, Vol. 46 (2006), p.743

DOI: 10.1016/j.microrel.2005.08.002

Google Scholar

[3] http://www.acreo.se/

Google Scholar

[4] R. Esteve, A. Schöner, S.A. Reshanov, C.-M. Zetterling, H. Nagasawa, J. Appl. Phys. Vol. 106 (2009), p.044514

Google Scholar

[5] M. Usman, A. Hallén, T. Pilvi, A. Schöner, M. Leskelä, J. Electrochem. Soc. Vol. 158 (2011), p. H75

Google Scholar

[6] Available: http://www.srim.org/

Google Scholar

[7] K. Gulbinas, V. Grivickas, H.P. Mahabadi, M. Usman, A. Hallén, ISSN 1392–1320 Materials Science (MEDŽIAGOTYRA). Vol. 17 (2011), p.119

DOI: 10.5755/j01.ms.17.2.479

Google Scholar

[8] W.M.M. Kessels, S.B.S. Heil, E. Langereis, J.L. van Hemmen, H.C.M. Knoops, W. Keuning, M.C.M. van de Sanden, ECS Transactions, Vol. 3(15) (2007), p.183

DOI: 10.1149/1.2721487

Google Scholar

[9] SIMNRA ver. 6.05. Available: http://www.rzg.mpg.de/~mam/

Google Scholar

[10] M. Avice, U. Grossner, I. Pintilie, B.G. Svensson, O. Nilsen, H. Fjellvag, Appl. Phys. Lett. Vol. 89 (2006), p.222103

Google Scholar