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Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face

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Abstract:

The causes of extrinsic failures in time-dependent dielectric breakdown characteristics of gate oxide on C-face of 4H-SiC are examined by comparing breakdown points of tested gate oxides with the images of X-ray topography and those of differential interference contrast microscopy. We have concluded as follows: (1) surface morphological defects that originate from threading screw dislocations degrade reliability of gate oxides. (2) These surface defects are not necessarily found on every wafer. (3) Crystallographic defects are not killer defects of MOSFET per se.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

789-792

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.789

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Cite this paper

Online since:

May 2012

Authors:

Takuma Suzuki, Hirotaka Yamaguchi, Tetsuo Hatakeyama, Hirofumi Matsuhata, Junji Senzaki, Kenji Fukuda, Takashi Shinohe, Hajime Okumura

Keywords:

4H-SiC, Defect, Dislocation, Gate Oxide, MOS, MOSFET, Reliability, Silicon Carbide (SiC), TDDB

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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References

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