Two-Dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)

Ryu Hasunuma; Tatsuya Fukasawa; Ryouji Kosugi; Yuuki Ishida; Kikuo Yamabe

doi:10.4028/www.scientific.net/MSF.717-720.785

Paper Titles

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors
p.769

Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures
p.773

A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
p.777

Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
p.781

Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)
p.785

Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
p.789

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs
p.793

Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters
p.797

Identification of Slow States at the SiO₂/SiC Interface through Sub-Bandgap Illumination
p.801

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Two-Dimensional Roughness Growth at Surface and...

Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)

Abstract:

The surface and interface roughness of SiO₂/4H-SiC(0001) was investigated in terms of Si emission from the interface and oxidation induced compressive stress. It was demonstrated that the SiO₂ surface roughness growth was strongly related with oxidation mechanism, as well as SiO₂ on Si substrate. A model for surface roughening was proposed with areal Si density and Young’s modulus to inclusively explain the surface roughness of SiO₂ on various substrates.

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Materials Science Forum (Volumes 717-720)

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785-788

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.785

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Online since:

May 2012

Authors:

Ryu Hasunuma, Tatsuya Fukasawa, Ryouji Kosugi, Yuuki Ishida, Kikuo Yamabe

Keywords:

Roughness, Si Emission, Silicon Carbide (SiC), Thermal Oxidation

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References

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