Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors

Harsh Naik; Z. Li; H. Issa; Y.L. Tian; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.717-720.769

Paper Titles

Improvement in the SiO₂/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide
p.753

Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation
p.757

Passivation and Depassivation of Interface Traps at the SiO₂/4H-SiC Interface by Potassium Ions
p.761

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices
p.765

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors
p.769

Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures
p.773

A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
p.777

Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
p.781

Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)
p.785

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Study of High Temperature Microwave Annealing on...

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors

Abstract:

The strong covalent bond of SiC imposes harsh post implantation annealing condition requirement for SiC MOS devices. As a consequence the effect of the annealing conditions on the channel region of the MOS devices becomes critical. High temperature microwave annealing has been shown to be an attractive alternative to conventional thermal annealing techniques. The effect of high temperature rapid microwave annealing on the performance of 4H-SiC MOS capacitors has been studied in this paper. Annealing temperatures ranging from 1600°C up to 2000°C for 30secs is used and the effect of annealing conditions is studied via C-V measurements on MOS capacitors.

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Materials Science Forum (Volumes 717-720)

Pages:

769-772

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.769

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Online since:

May 2012

Authors:

Harsh Naik, Z. Li, H. Issa, Y.L. Tian, T. Paul Chow

Keywords:

4H-SiC, Microwave Annealing (MWA), MOS Capacitor, SiC Implantation Annealing, SiC/SiO₂ Interface

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