Passivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium Ions

Pétur Gordon Hermannsson; E.Ö. Sveinbjörnsson

doi:10.4028/www.scientific.net/MSF.717-720.761

Paper Titles

The Effects of Phosphorus at the SiO₂/4H-SiC Interface
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SiO₂/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments
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Improvement in the SiO₂/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide
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Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation
p.757

Passivation and Depassivation of Interface Traps at the SiO₂/4H-SiC Interface by Potassium Ions
p.761

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices
p.765

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors
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Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures
p.773

A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
p.777

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Passivation and Depassivation of Interface Traps...

Passivation and Depassivation of Interface Traps at the SiO₂/4H-SiC Interface by Potassium Ions

Abstract:

We investigate the passivation of interface traps by method of oxidizing Si-face 4H-SiC in the presence of potassium as well as examining the thermal stability of this passivation process. It is observed that this type of dry oxidation leads to a strong passivation of interface traps at the SiO2/4H-SiC interface with energy levels near the SiC conduction band edge. Furthermore, it is observed that if potassium ions residing at the SiO2/SiC interface are moved towards the sample surface by exposing them to ultraviolet light (UV) under an applied depletion bias stress at high temperatures the interface traps become electrically active again and are evidently depassivated. These findings are in line with recently a published model of the effect of sodium on such interface states

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Materials Science Forum (Volumes 717-720)

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761-764

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https://doi.org/10.4028/www.scientific.net/MSF.717-720.761

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May 2012

Authors:

Pétur Gordon Hermannsson, E.Ö. Sveinbjörnsson

Keywords:

Alkali Metals, Interface State, Oxidation, Passivation

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