Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

Alberto F. Basile; A.C. Ahyi; L.C. Feldman; J.R. Williams; P.M. Mooney

doi:10.4028/www.scientific.net/MSF.717-720.757

Paper Titles

Effect of POCl₃ Annealing on Reliability of Thermal Oxides Grown on 4H-SiC
p.739

The Effects of Phosphorus at the SiO₂/4H-SiC Interface
p.743

SiO₂/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments
p.747

Improvement in the SiO₂/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide
p.753

Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation
p.757

Passivation and Depassivation of Interface Traps at the SiO₂/4H-SiC Interface by Potassium Ions
p.761

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices
p.765

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors
p.769

Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures
p.773

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Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

Abstract:

The electrical properties of the SiO₂/SiC interface fabricated by sodium-enhanced oxidation (SEO) of n-type 4H-SiC were studied by temperature-dependent C-V and constant-capacitance deep level transient spectroscopy (CCDLTS). With the exception of near-interface traps in the SiC epi-layer, which are not present in the SEO samples, the trap species observed in SEO capacitors are the same as those observed in both standard-oxidized and NO-annealed MOS capacitors. Total electron trapping in accumulation is comparable in SEO and NO-annealed capacitors; however, the traps in SEO capacitors are located at the interface whereas tunneling into oxide traps is observed in NO-annealed samples. A series of bias-temperature stress tests show that electron trapping is essentially unchanged when mobile sodium ions are moved toward the interface. The improved mobility attained by this process compared to NO annealing may be due to the absence of near-interface SiC traps in SEO samples.