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Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

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Abstract:

We have evaluated the reliability of POCl3-annealed oxides on 4H-SiC using time-zero dielectric breakdown (TZDB), constant current time-dependent dielectric breakdown (CC-TDDB), and high-frequency capacitance-voltage (C-V) measurements after electron injection. The POCl3 annealing does not deteriorate oxide breakdown field very much, still keeping an average value of larger than 9 MV/cm. However, the electron injection into POCl3-annealed oxide brings negative charges easily. From the C-V measurements, the POCl3-annealed capacitors were found to indicate a large positive flatband voltage shift after electron injection. Phosphorus atoms in the oxide may be related to the trapping site of injected electrons. The distribution and density of phosphorus in the oxide should be optimized to realize highly reliable 4H-SiC MOSFETs with high performance.

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Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

739-742

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.739

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Online since:

May 2012

Authors:

Ryuji Morishita, Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, Takashi Fuyuki

Keywords:

4H-SiC, Constant-Current TDDB, MOS, POCl3 Annealing, Reliability, TZDB

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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References

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