Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide

Dai Okamoto; Hiroshi Yano; Tomoaki Hatayama; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.717-720.733

Paper Titles

Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces
p.717

Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface
p.721

Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States
p.725

Improved Deposited Oxide Interfaces from N₂Conditioning of Bare SiC Surfaces
p.729

Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
p.733

Effect of POCl₃ Annealing on Reliability of Thermal Oxides Grown on 4H-SiC
p.739

The Effects of Phosphorus at the SiO₂/4H-SiC Interface
p.743

SiO₂/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments
p.747

Improvement in the SiO₂/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide
p.753

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Development of 4H-SiC MOSFETs with...

Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide

Abstract:

In this article, we show some new results regarding the electrical properties of 4H-SiC MOSFETs fabricated by thermal annealing using POCl₃. The temperature dependence of MOSFET properties is described and the effect of POCl₃ annealing followed by forming gas annealing is shown. POCl₃-annealed MOSFETs indicates negative temperature dependence of channel mobility and smaller change in threshold voltage. Forming gas anneal after the POCl₃ treatment further improves channel mobility up to about 101 cm²/Vs. Features and problems of P-doped oxide are summarized and the future challenges are described.

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Materials Science Forum (Volumes 717-720)

Pages:

733-738

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.733

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Online since:

May 2012

Authors:

Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki

Keywords:

4H-SiC MOSFET, Interface State Density (D_it), Phosphorus-Doped Gate Oxide, PoCl₃

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