Effects of N Incorporation on Electron Traps at SiO2/SiC Interfaces

Alberto F. Basile; Sarit Dhar; John R. Williams; Leonard C. Feldman; Patricia M. Mooney

doi:10.4028/www.scientific.net/MSF.717-720.717

Paper Titles

Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates
p.697

Challenges of High-Performance and High-Reliablity in SiC MOS Structures
p.703

Effect of Post-Oxidation Annealing in Wet O₂ and N₂O Ambient on Thermally Grown SiO₂/4H-SiC Interface for P-Channel MOS Devices
p.709

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
p.713

Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces
p.717

Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface
p.721

Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States
p.725

Improved Deposited Oxide Interfaces from N₂Conditioning of Bare SiC Surfaces
p.729

Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
p.733

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Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces

Abstract:

Temperature dependent capacitance-voltage (C-V) and constant capacitance transient spectroscopy (CCDLTS) measurements have been performed to investigate the role of N in improving the transport properties of 4H-SiC MOS transistors. The higher channel mobility in the N pre-implanted transistors is due at least in part to activation of a small fraction of the implanted N near the SiO₂/SiC interface as donors in SiC during oxidation, thus reducing the effects of interface trapping. In addition, the absence of oxidation-induced near-interface defects, which were observed in NO-annealed capacitors, may contribute to the improved mobility in N pre-implanted transistors.