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Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates

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Abstract:

The fundamental aspects of thermal oxidation and oxide interface grown on 4H-SiC(0001) Si-face and (000-1) C-face substrates were investigated by means of high-resolution x-ray photoelectron spectroscopy (XPS) using synchrotron radiation together with electrical measurements of SiC-MOS capacitors. We found that, for both cases, there existed no distinct C-rich transition layer despite the literature. In contrast, atomic scale roughness causing degradation of SiC-MOS devices, such as negative fixed charge and electrical defects just at the oxide interface, was found to be introduced as thermal oxidation progressed, especially for the (000-1) C-face substrate.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

697-702

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.697

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Online since:

May 2012

Authors:

Heiji Watanabe, Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Atthawut Chanthaphan, Akitaka Yoshigoe, Yuden Teraoka, Suhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura

Keywords:

Fixed Oxide Charge, Interface State Density (Dit), Interface Structure, MOS Device, Photoelectron Spectroscopy, Synchrotron Radiation, Thermal Oxidation

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