Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

Sarit Dhar; Ayayi Claude Ahyi; John R. Williams; Sei Hyung Ryu; Anant K. Agarwal

doi:10.4028/www.scientific.net/MSF.717-720.713

Paper Titles

Temperature Dependent Chemical Sensitivity of Epitaxial Graphene
p.691

Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates
p.697

Challenges of High-Performance and High-Reliablity in SiC MOS Structures
p.703

Effect of Post-Oxidation Annealing in Wet O₂ and N₂O Ambient on Thermally Grown SiO₂/4H-SiC Interface for P-Channel MOS Devices
p.709

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
p.713

Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces
p.717

Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface
p.721

Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States
p.725

Improved Deposited Oxide Interfaces from N₂Conditioning of Bare SiC Surfaces
p.729

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Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

Abstract:

Hall measurements on NO annealed 4H-SiC MOS gated Hall bars are reported in the temperature range 77 K- 423 K. The results indicate higher carrier concentration and lower trapping at increased temperatures, with a clear strong inversion regime at all temperatures. In stark contrast to Si, the Hall mobility increases with temperature for 77 K-373K, above which the mobility decreases slightly. The maximum experimental mobility was found to be ~50 cm² V^-1 s^-1 which is only about 10% of the 4H-SiC bulk mobility indicating that while NO annealing drastically improves trapping, it does not improve the mobility significantly. Supporting modeling results strongly suggest the presence of a disordered SiC channel region.