Challenges of High-Performance and High-Reliablity in SiC MOS Structures

Junji Senzaki; Atsushi Shimozato; Kazutoshi Kojima; Tomohisa Kato; Yasunori Tanaka; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.717-720.703

Paper Titles

T- and Y-Branched Three-Terminal Junction Graphene Devices
p.683

Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection
p.687

Temperature Dependent Chemical Sensitivity of Epitaxial Graphene
p.691

Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates
p.697

Challenges of High-Performance and High-Reliablity in SiC MOS Structures
p.703

Effect of Post-Oxidation Annealing in Wet O₂ and N₂O Ambient on Thermally Grown SiO₂/4H-SiC Interface for P-Channel MOS Devices
p.709

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
p.713

Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces
p.717

Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface
p.721

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Challenges of High-Performance and High-Reliablity...

Challenges of High-Performance and High-Reliablity in SiC MOS Structures

Abstract:

Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally grown on 4H-SiC (0001) wafer have been investigated for a realization of SiC MOS power devices. The SiC MOS characteristics depend on the gate oxide fabrication process, and are improved by the increase of DRY oxidation temperature and the applying of N2O and H2 POAs. In addition, it was clearly shown that predominant origins of SiC MOS reliability degradation are wafer-related defects such as dislocation and surface defects of epitaxial layer. Moreover, the planarization of SiC epitaxial layer surface using a CMP treatment is effective technique for the improvement of SiC MOS reliability.