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Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices

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Abstract:

We investigated the effect of post-oxidation annealing in wet O2 and N2O ambient, following dry O2 oxidation on the SiC MOS interfacial properties by using p-type MOS capacitors. The interfacial properties were dramatically improved by the introduction of hydrogen or nitrogen atoms into the SiO2/SiC interface, in each POA process. Notably, the N2O-POA process at 1200 °C or higher reduced the interface state density more effectively than the wet-O2-POA process, and offers a promising method to further improve the inversion channel mobility of p-channel SiC MOS devices.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

709-712

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.709

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Online since:

May 2012

Authors:

Shuji Katakami, Manabu Arai, Kensuke Takenaka, Yoshiyuki Yonezawa, Hitoshi Ishimori, Mitsuo Okamoto, Kazutoshi Kojima, Kenji Fukuda

Keywords:

Effective Oxide Charge (Qeff/q), Interface State Density (Dit), MOS Capacitor, N2O, p-Channel MOS Device, Post-Oxidation Annealing

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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