Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States

Takashi Sakai; Mitsunori Hemmi; Yusuke Murata; Tomohiko Yamakami; Rinpei Hayashibe; Yoshiharu Onuma; Kiichi Kamimura

doi:10.4028/www.scientific.net/MSF.717-720.725

Paper Titles

Effect of Post-Oxidation Annealing in Wet O₂ and N₂O Ambient on Thermally Grown SiO₂/4H-SiC Interface for P-Channel MOS Devices
p.709

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
p.713

Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces
p.717

Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface
p.721

Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States
p.725

Improved Deposited Oxide Interfaces from N₂Conditioning of Bare SiC Surfaces
p.729

Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
p.733

Effect of POCl₃ Annealing on Reliability of Thermal Oxides Grown on 4H-SiC
p.739

The Effects of Phosphorus at the SiO₂/4H-SiC Interface
p.743

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Effect of Direct Nitridation of 4H-SiC Surface on...

Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States

Abstract:

A nitride layer was formed on a SiC surface by direct nitridation in pure N2 or in NH3 diluted with N2. The SiO2 layer was deposited by the thermal decomposition of tetraethylorthosilicate (TEOS) on the nitride layer to form an MIS diode. The XPS analysis showed that the nitride layer was oxidized during the deposition process of SiO2. The direct nitridation was effective to reduce the interface state density between the insulating layer and 4H-SiC