Temperature Dependent Chemical Sensitivity of Epitaxial Graphene

V. Kartheek Nagareddy; D. Kurt Gaskill; J.L. Tedesco; Rachael L. Myers-Ward; Charles R. Eddy; Jonathan P. Goss; Nicolas G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.717-720.691

Paper Titles

Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions
p.679

T- and Y-Branched Three-Terminal Junction Graphene Devices
p.683

Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection
p.687

Temperature Dependent Chemical Sensitivity of Epitaxial Graphene
p.691

Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates
p.697

Challenges of High-Performance and High-Reliablity in SiC MOS Structures
p.703

Effect of Post-Oxidation Annealing in Wet O₂ and N₂O Ambient on Thermally Grown SiO₂/4H-SiC Interface for P-Channel MOS Devices
p.709

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
p.713

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Temperature Dependent Chemical Sensitivity of Epitaxial Graphene

Abstract:

We investigated the chemical sensing mechanism of epitaxial graphene grown on 6H-SiC (0001) to different polar solvents and their behavior at higher temperatures. We show that at 300 K the sensitivity of the graphene sensor increases exponentially with the dipole moment of a solvent and decreases significantly as the temperature increased to 425 K. Using electrical measurements, we also show that graphene can effectively discriminate between polar protic and polar aprotic solvents with the shift in device electrical resistance at 300 K.