Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection

Ruth Pearce; R. Yakimova; L. Hultman; Jens Eriksson; Mike Andersson; Anita Lloyd Spetz

doi:10.4028/www.scientific.net/MSF.717-720.687

Paper Titles

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Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions
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Temperature Dependent Chemical Sensitivity of Epitaxial Graphene
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Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Development of FETs and Resistive Devices Based on...

Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection

Abstract:

Epitaxially grown single layer graphene on silicon carbide (SiC) resistive sensors were characterised for NO2 response at room and elevated temperatures, with an n-p type transition observed with increasing NO2 concentrations for all sensors. The concentration of NO2 required to cause this transition varied with different graphene samples and is attributed to varying degrees of substrate induced Fermi-level pinning above the Dirac point. The work function of a single layer device demonstrated a steady increase in work function with increasing NO2 concentration indicating no change in reaction mechanism in the concentration range measured despite a change in sensor response direction. Epitaxially grown graphene device preparation is challenging due to poor adhesion of the graphene layer to the substrate. A field effect transistor (FET) device is presented which does not require wire bonding to contacts on graphene.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

687-690

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.687

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Online since:

May 2012

Authors:

Ruth Pearce, R. Yakimova, L. Hultman, Jens Eriksson, Mike Andersson, Anita Lloyd Spetz

Keywords:

Epitaxial Graphene, Gra-FET, NO₂ Sensor, Work Function

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References

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