Improvement in the SiO2/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide

Eduardo Pitthan; Silma A. Corrêa; Rodrigo Palmieri; Gabriel Vieira Soares; Henri I. Boudinov; Fernanda Chiarello Stedile

doi:10.4028/www.scientific.net/MSF.717-720.753

Paper Titles

Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
p.733

Effect of POCl₃ Annealing on Reliability of Thermal Oxides Grown on 4H-SiC
p.739

The Effects of Phosphorus at the SiO₂/4H-SiC Interface
p.743

SiO₂/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments
p.747

Improvement in the SiO₂/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide
p.753

Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation
p.757

Passivation and Depassivation of Interface Traps at the SiO₂/4H-SiC Interface by Potassium Ions
p.761

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices
p.765

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Improvement in the SiO2/4H-SiC Interfacial Region...

Improvement in the SiO₂/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide

Abstract:

The effect of sequential thermal treatments with growth/removal steps of SiO₂ films intercalated with hydrogen peroxide treatments on the SiO₂/4H-SiC interfacial region thickness were investigated on both Si and C faces. In the Si face case, samples that were submitted to more H₂O₂ treatments presented thinner interfacial region thicknesses. In the C face case, on the other hand, no significant alteration in this region was observed.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

753-756

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.753

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Online since:

May 2012

Authors:

Eduardo Pitthan, Silma A. Corrêa, Rodrigo Palmieri, Gabriel Vieira Soares, Henri I. Boudinov, Fernanda Chiarello Stedile

Keywords:

Hydrogen Peroxide, SiO₂/SiC Interfacial Region, Thermal Growth

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References

[1] J.B. Casady, R.W. Johnson, Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review, Solid-state Electron. 39 (1996) 1409-1422.

DOI: 10.1016/0038-1101(96)00045-7

Google Scholar

[2] S. Dhar, S. Wang, J.R. Williams, S.T. Pantelides, L.C. Feldman, Interface passivation for silicon dioxide layers on silicon carbide, MRS Bull. 30 (2005) 288-292.

DOI: 10.1557/mrs2005.75

Google Scholar

[3] R. Palmieri, C. Radtke, H. Boudinov, E. F. da Silva Jr., Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide, Appl. Phys. Lett. 95 (2009) 113504.

DOI: 10.1063/1.3231923

Google Scholar

[4] T.L. Biggerstaff, C.L. Reynolds, Jr., T. Zheleva, A. Lelis, D. Habersat, S. Haney, S.-H. Ryu, A. Agarwal, G. Duscher, Relationship between 4H-SiC/SiO2 transition layer thickness and mobility, Appl. Phys. Lett. 95 (2009) 032108.

DOI: 10.1063/1.3144272

Google Scholar

[5] I.J.R. Baumvol, Atomic transport during growth of ultrathin dielectrics on silicon, Surf. Sci. Rep. 36 (1999) 1-166.

Google Scholar

[6] K.-C. Chang, Y. Cao, L.M. Porter, J. Bentley, S. Dhar, L.C. Feldman, J.R. Williams, High-resolution elemental profiles of the silicon dioxide/4H-silicon carbide interface, J. Appl. Phys. 97 (2005) 104920.

DOI: 10.1063/1.1904728

Google Scholar