SiO₂/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments

Abstract:

This work provides data corroborating the presence of silicon oxycarbides (SiO_xC_y) in the SiO₂/SiC interface region. Besides, it presents results on the efficiency of hydrogen peroxide annealings for reducing the SiO₂/SiC interfacial region thickness. Finally, influences of water vapor thermal treatments on dielectric films thermally grown are presented. In most of the samples, isotopes rare in nature (¹⁸O and ²H) were used in thermal treatments associated with ion beam analyses.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 747-752
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.747
• Online since: May 2012
• Authors: Fernanda Chiarello Stedile, Cláudio Radtke, Gabriel Vieira Soares, Eduardo Pitthan, Rodrigo Palmieri, Silma A. Corrêa
• Keywords: H₂O₂ Annealing, Silicon Oxycarbides, SiO₂/SiC Interface, Water Vapor Interaction

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