A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)

Kevin M. Speer; Philip G. Neudeck; Mehran  Mehregany

doi:10.4028/www.scientific.net/MSF.717-720.777

Paper Titles

Passivation and Depassivation of Interface Traps at the SiO₂/4H-SiC Interface by Potassium Ions
p.761

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices
p.765

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors
p.769

Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures
p.773

A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
p.777

Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
p.781

Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)
p.785

Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
p.789

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs
p.793

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720A Reduction of Defects in the SiO2-SiC System...

A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)

Abstract:

The SiC vacuum field-effect transistor (VacFET) was first reported in 2010 as a diagnostic tool for characterizing the fundamental properties of the inverted SiC semiconductor surface without confounding issues associated with thermal oxidation. In this paper, interface state densities are extracted from measurements of threshold voltage instability on a SiC VacFET and a SiC MOSFET. It is shown that removing the oxide can reduce the interface state density by more than 70%.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

777-780

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.777

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Online since:

May 2012

Authors:

Kevin M. Speer, Philip G. Neudeck, Mehran Mehregany

Keywords:

Interface State, MOSFET, Silicon Carbide (SiC), Threshold Voltage, VacFET, Vacuum

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References

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