Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs

Liang Chun Yu; Jody Fronheiser; Vinayak Tilak; Kin P. Cheung

doi:10.4028/www.scientific.net/MSF.717-720.793

Paper Titles

A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
p.777

Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
p.781

Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)
p.785

Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
p.789

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs
p.793

Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters
p.797

Identification of Slow States at the SiO₂/SiC Interface through Sub-Bandgap Illumination
p.801

Effect of Nuclear Scattering Damage at SiO₂/SiC and Al₂O₃/SiC Interfaces – a Radiation Hardness Study of Dielectrics
p.805

High Temperature Reliability of High-k/SiC MIS Hydrogen Sensors
p.809

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Frequency-Dependent Charge Pumping on 4H-SiC...

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs

Abstract:

The quality of the SiC/SiO₂ interface is critical to the stability and performance of MOS-based SiC power devices. Charge pumping is a flexible interface characterization technique. In this work, a significant portion of the total traps are found to be located in the near-interface oxide using frequency-dependent charge pumping. Oxide trap tunneling mechanisms are discussed, and trap profile as a function of depth is calculated. The trap density is shown to increase exponentially as it gets closer to the interface.

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Materials Science Forum (Volumes 717-720)

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793-796

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.793

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Online since:

May 2012

Authors:

Liang Chun Yu, Jody Fronheiser, Vinayak Tilak, Kin P. Cheung

Keywords:

Charge Pumping, MOSFET, Near-Interface Oxide Defect, Physical Depth Profile

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References

[1] C.J. Scozzie and J.M. McGarrity, Materials Science Forum, Vol. 264-268 (1998), pp.985-988

DOI: 10.4028/www.scientific.net/msf.264-268.985

Google Scholar

[2] D. Okamoto, H. Yano, T. Hatayama, Y. Uraoka and T. Fuyuki, IEEE Transactions on Electron Devices, Vol. 55 (2008), pp.2013-2020

DOI: 10.1109/ted.2008.926639

Google Scholar

[3] D.B. Habersat, A.J. Lelis, J.M. McGarrity, F.B. McLean and S. Potbhare, Materials Science Forum, Vol. 600-603 (2009), pp.743-746

DOI: 10.4028/www.scientific.net/msf.600-603.743

Google Scholar

[4] X. D. Chen, S. Dhar, T. Isaacs-Smith, J. R. Williams, L. C. Feldman, andP. M. Mooney, Journal of Applied Physics, Vol.103 (2008), p.033701

Google Scholar

[5] F. Zhang, K.P. Cheung, J.P. Campbell and J.S. Suehle, IEEE International Reliability Physics Symposium (2010), pp.804-806

Google Scholar

[6] I. Lundstrom and C. Svensson, Journal of Applied Physics, Vol. 43 (1972), pp.5045-5047

Google Scholar

[7] T.L. Tewksbury III, MIT Ph.D thesis (1992)

Google Scholar

[8] http://www.ioffe.ru/SVA/NSM/Semicond/SiC/bandstr.html#Effective%20Density

Google Scholar

[9] G. Pennington and N. Goldsman, Journal of Applied Physics, Vol.95 (2004), pp.4223-4234

Google Scholar

[10] L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J. Campbell, J.S. Suehle and K. Sheng, Materials Science Forum Vols. 645-648 (2010), pp.979-982

DOI: 10.4028/www.scientific.net/msf.645-648.979

Google Scholar

[11] V. Tilak, K. Matocha and G. Dunne, IEEE Transactions on Electron Devices, Vol. 54 (2007), pp.2823-2829.

DOI: 10.1109/ted.2007.906929

Google Scholar