AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance

Wael Jatal; Katja Tonisch; Uwe Baumann; Frank Schwierz; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.740-742.1115

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AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742AlGaN/GaN Based HEMTs on SiC/Si-Substrates:...

AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance

Abstract:

Al0.35Ga0.65N/GaN- and Al0.2Ga0.8N/AlN/GaN-heterostructures high electron mobility transistors (HEMTs) with a gate length (LG) varying from 1.2 to 0.08 µm were fabricated on silicon Si(111) substrates using a 3C-SiC transition layer. Metal organic chemical vapour deposition (MOCVD) was used to growth the AlGaN-heterostructures and a low pressure chemical vapour deposition (LPCVD) to create the 3C-SiC(111) transition layer preventing Ga-induced melt back etching and Si-out diffusion. Reduced Al content and an AlN interlayer improved the device performance. The HEMTs with LG=0.08µm had a maximum drain current density of 1.25 A/mm and a peak extrinsic transconductance of 400 mS/mm. A unity current gain cut-off frequency (ƒT) of 180 GHz and maximum frequency (ƒmax) of 70 GHz were measured on these devices.

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Materials Science Forum (Volumes 740-742)

Pages:

1115-1118

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https://doi.org/10.4028/www.scientific.net/MSF.740-742.1115

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Online since:

January 2013

Authors:

Wael Jatal, Katja Tonisch, Uwe Baumann, Frank Schwierz, Joerg Pezoldt

Keywords:

CVD, HEMT, Heterostructure, III-Nitrides

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