SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices

Lars Hiller; Katja Tonisch; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.740-742.1119

Paper Titles

A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators
p.1089

An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes
p.1093

Modeling of the Impact of Parameter Spread on the Switching Performance of Parallel-Connected SiC VJFETs
p.1098

Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance
p.1103

Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer
p.1107

The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes
p.1111

AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance
p.1115

SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices
p.1119

1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors
p.1123

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742SiC/Si Pseudosubstrates for AlGaN Nanoelectronic...

SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices

Abstract:

Heteroepitaxial AlGaN/GaN on SiC/Si pseudosubstrate was used to fabricate three-terminal junction devices. Narrow bar and wide bar type active regions were fabricated. The measurement at room temperature showed predicted nonlinear behavior (previously reported about as negative type rectification). Unusual, positive type rectification for two dimensional electron gases was also observed. The electrical characteristics depend on the geometrical configuration of the devices.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

1119-1122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.1119

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Online since:

January 2013

Authors:

Lars Hiller, Katja Tonisch, Joerg Pezoldt

Keywords:

AlGaN, Ballistic Transport, GaN, Heteroepitaxy, Pseudosubstrate, Silicon Carbide (SiC), TBJ, Three Terminal Junction, TTJ

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References

[1] J. Mateos, B.G. Vasallo, D. Pardo, T. González, E. Pichonat, J.S. Galloo, S. Bollaert, Y. Roelens and A. Cappy, IEEE Electron Device Letters 25 (2004) 235-237.

DOI: 10.1109/led.2004.826571

Google Scholar

[2] R. Lewén, I. Maximov, I. Shorubalko, L. Samuelson, L. Thylén and H.Q. Xu, J. Appl. Phys. 91 (2002) 2398-2402.

DOI: 10.1063/1.1429801

Google Scholar

[3] R. Göckeritz, K. Tonisch, W. Jatal, L. Hiller, F. Schwierz and J. Pezoldt, Adv. Mater. Res. 324 (2011) 427-430.

DOI: 10.4028/www.scientific.net/amr.324.427

Google Scholar

[4] S. de Haan, A. Lorke, J.P. Kotthaus, M. Bichler, W. Wegschneider, Physica E 21 (2004) 916-920.

Google Scholar

[5] Ch. Förster, V. Cimalla, O. Ambacher and J. Pezoldt, Mater. Sci. Forum 483-485 (2005) 201-204.

DOI: 10.4028/www.scientific.net/msf.483-485.201

Google Scholar

[6] I. Iniguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J.S. Galloo, S. Bollaert, Y. Roelens and A. Cappy, Semicond. Sci. Technol. 22 (2007) 663-667.

DOI: 10.1088/0268-1242/22/6/014

Google Scholar

[7] I. Iniguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert and J. Mateos, J. Appl. Phys. 105 (2009) 094504.

DOI: 10.1063/1.3124363

Google Scholar

[8] A.M. Song, M. Missous, P. Omling, A.R. Peaker, L. Samuelson and W. Seifert, Appl. Phys. Lett. 83 (2003) 1881-1883.

DOI: 10.1063/1.1606881

Google Scholar

[9] R. Vetury, N.Q. Zhang, S. Keller and U.K. Mishra, IEEE T-ED 48 No. 3 (2001) 560-566.

Google Scholar

[10] J.J. Freedsman, T. Kubo and T. Egawa, Appl. Phys. Lett. 101 (2012) 013506.

Google Scholar