1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

Arne Hendrik Wienhausen; Dirk Kranzer

doi:10.4028/www.scientific.net/MSF.740-742.1123

Paper Titles

A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators
p.1089

An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes
p.1093

Modeling of the Impact of Parameter Spread on the Switching Performance of Parallel-Connected SiC VJFETs
p.1098

Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance
p.1103

Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer
p.1107

The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes
p.1111

AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance
p.1115

SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices
p.1119

1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors
p.1123

HomeMaterials Science ForumMaterials Science Forum Vols. 740-7421 MHz Resonant DC/DC-Converter Using 600 V Gallium...

1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

Abstract:

Gallium Nitride (GaN) is known to provide the opportunity of producing power transistors with remarkable electrical properties, such as low on-state resistance and low switching energies. This paper demonstrates how the use of GaN power transistors along with the possibility of raising the switching frequency can lead to a significant reduction of volume, weight and production costs of a power converter while maintaining high efficiency. A 1 kW resonant LLC converter using 600 V GaN power transistors is presented.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

1123-1127

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.1123

Citation:

Cite this paper

Online since:

January 2013

Authors:

Arne Hendrik Wienhausen, Dirk Kranzer

Keywords:

Gallium Nitride Gate Injection Transistor, LLC, MHz Switching Frequency, Resonant DC/DC-Converter

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Jun-Young Lee, Yu-Seok Jeong, Byung-Moon Han, An Isolated DC/DC Converter Using High-Frequency Unregulated LLC Resonant Converter for Fuel Cell Applications, IEEE Trans. Industrial El., vol. 58, (2011).

DOI: 10.1109/tie.2010.2076311

Google Scholar

[2] B. Burger, D. Kranzer, O. Stalter, Cost Reduction of PV-Inverters with SiC-DMOSFETs, CIPS-(2008).

DOI: 10.4028/www.scientific.net/msf.600-603.1231

Google Scholar

[3] Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, Gate Injection Transistor (GIT) - A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation, IEEE Trans. Electron Device, vol. 54, (2007).

DOI: 10.1109/ted.2007.908601

Google Scholar

[4] M. K. Kazimierczuk, Resonant Power Converters 2nd Edition, Wiley, New Jersey, (2011).

Google Scholar